Jingsheng Electromechanical has successfully developed a 12 inch conductive SiC crystal

With the rapid development of the SiC industry, breakthroughs in substrate technology and large-size processes are reshaping the global market pattern. On May 12, Zhejiang Jingrui Electronic Materials Co., Ltd. (hereinafter referred to as "Zhejiang Jingrui SuperSiC"), a company of Jingsheng Machinery Electronics, achieved a breakthrough in 12-inch conductive silicon carbide (SiC) single crystal growth technology, and the first 12-inch SiC crystal was successfully released - the crystal diameter reached 309mm and the quality was intact. This not only marks that Jingsheng Electromechanical has achieved the independent and controllable 6-12-inch full-size crystal growth technology in the field of SiC, but also provides strong technical support for the independent development of our country's SiC industry chain.

▲ The first 12-inch conductive silicon carbide (SiC) single crystal

As a representative of the third generation of semiconductor materials, SiC has excellent characteristics such as high bandgap, high hardness and wear resistance, and high thermal conductivity, making it an ideal material for manufacturing high-voltage, high-temperature, and high-frequency power devices. However, the preparation of large-size SiC crystals has always been a global technical problem, and the industry's main flow yield size was still 6-8 inch substrates. Based on the self-developed SiC single crystal growth furnace and the continuous iterative upgrade of the 8-12-inch crystal long crystal process, Zhejiang Jingrui SuperSiC has successfully overcome the core problems such as uneven temperature field and crystal cracking in the growth of 12-inch SiC crystals, and achieved an important breakthrough in the growth of 12-inch ultra-large crystals.

▲ The first 12-inch conductive silicon carbide (SiC) single crystal

Zhejiang Jingrui SuperSiC has successfully developed a 12-inch SiC crystal, which greatly improves the effective usable area of the wafer and quickly reduces the unit cost of chips, which is an important symbol of Jingsheng Electromechanical's official entry into a new era of ultra-large SiC substrates, which will further accelerate the improvement of our country's SiC industry chain and provide possibilities for the rapid large-scale application of domestic SiC materials in new energy vehicles, photovoltaic energy storage, smart grids, 5G and AI/AR smart glasses and other industries.

As Jingsheng Machinery Electronics Company, Zhejiang Jingrui SuperSiC has always focused on the research and development and production of compound semiconductor materials such as silicon carbide and sapphire polishing wafers. At present, the company's self-developed 8-inch silicon carbide substrate has been mass-produced.

▲ 8-inch silicon carbide substrate mass production

The successful breakthrough of Jingsheng Electromechanical's 12-inch conductive SiC crystal is not only a strong proof of the company's R&D strength, but also an important driving force for our country's semiconductor industry to shift from "catcher" to "lead" in the field of key basic materials. Jingsheng will continue to adhere to the development strategy of "advanced materials, advanced equipment", take independent innovation as the core, industrial synergy as the link, and green development as the coordinate, and continue to make efforts in the field of compound semiconductor materials to help our country's semiconductor industry leap to the high-end of the global value chain.